In recent years, wireless energy transmission technology has developed rapidly and has received increasing attention in the\nindustry. For microwave wireless energy transfer system applications, Ge Schottky diodes as the core components of the rectifier\ncircuit are commonly used. Compared with Ge semiconductor, strained Ge semiconductor on Si substrate has the advantages of\ncompatibility with Si process, low cost, and high electron mobility. It is an ideal replacement material for Ge semiconductor\napplications. In view of this, based on the model of the relationship between the performance of strained Ge semiconductor on Si\nsubstrate Schottky diodes and the geometric parameters of the device and the physical parameters of the material, Silvaco TCAD\nand ADS simulation software are jointly used to propose a novel strained Ge semiconductor on Si substrate Schottky diode for\nmicrowave rectification circuit..............................
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